PSMN1R1-25YLC 查看數據表（PDF） - Philips Electronics

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PSMN1R1-25YLC

N-channel 25 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology

Philips Electronics 

NXP Semiconductors

PSMN1R1-25YLC

N-channel 25 V 1.15 mΩ logic level MOSFET in LFPAK using

104

ID

(A)

103

102

10

1

10-1

10-1

Limit RDSon = VDS / ID

DC

1

003aaf538

tp =10 μ s

100 μs

1 ms

10 ms

100 ms

10

102

VDS (V)

Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

6. Thermal characteristics

Table 6.

Symbol

Rth(j-mb)

Thermal characteristics

Parameter

thermal resistance from

junction to mounting base

Conditions

see Figure 5

Min Typ Max Unit

-

0.58 0.7 K/W

1

Zth(j-mb)

(K/W)

δ = 0.5

0.2

10-1

0.1

0.05

0.02

10-2

single shot

003aaf539

P

δ = tp

T

tp

t

T

10-3

1e-6

10-5

10-4

10-3

10-2

10-1

tp (s) 1

Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

PSMN1R1-25YLC

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 1 — 2 May 2011

© NXP B.V. 2011. All rights reserved.

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