PSMN1R1-25YLC 查看數據表（PDF） - Philips Electronics

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PSMN1R1-25YLC

N-channel 25 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology

Philips Electronics 

NXP Semiconductors

PSMN1R1-25YLC

N-channel 25 V 1.15 mΩ logic level MOSFET in LFPAK using

6

RDS on

(mΩ)

5

4

3

2

1

0

0

003aaf 542

2.4

2.6

VGS (V) =2.8

3.0

3.5

10

4.5

25

50

75

100

ID (A)

003aaf 543

2

a

VGS = 4.5V

1.5

10V

1

0.5

0

-6 0

0

60

120

180

Tj ( C)

Fig 12. Drain-source on-state resistance as a function Fig 13. Normalized drain-source on-state resistance

of drain current; typical values

factor as a function of junction temperature

VDS

ID

VGS(pl)

VGS(th)

VGS

QGS1 QGS2

QGS

QGD

QG(tot)

003aaa508

10

VGS

(V)

8

6

4

2

0

0

003aaf 549

20V

12V

VDS = 5V

25

50

75

100

QG (nC)

Fig 14. Gate charge waveform definitions

Fig 15. Gate-source voltage as a function of gate

charge; typical values

PSMN1R1-25YLC

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 1 — 2 May 2011

© NXP B.V. 2011. All rights reserved.

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