RB501V-40 查看數據表（PDF） - ROHM Semiconductor

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RB501V-40

Schottky Barrier Diode

ROHM Semiconductor 

Schottky Barrier Diode

RB501V-40

Datasheet

lApplication

Low current rectification

lDimensions (Unit : mm)

1.25±0.1

0.1±0.1

　　　 0.05

lLand size figure (Unit : mm)

0.9MIN.

lFeatures

1) Ultra Small mold type.

(UMD2)

2) Low IR

for UMD2

lStructure

3) High reliability.

d lConstruction

de Silicon epitaxial planar

0.3±0.05

0.7±0.2

　　　 0.1

ROHM : UMD2 JEITA : SC-90/A

JEDEC :SOD-323

dot (year week factory)

lTaping specifications (Unit : mm)

4.0±0.1 2.0±0.05

φf11..5555±00.0.055

mmeensigns 1.40±0.1

4.0±0.1

φf11.0.055

o D lAbsolute maximum ratings (Ta= 25°C)

c Parameter

Symbol

Limits

Unit

e Reverse voltage (repetitive peak)

VRM

45

V

w Reverse voltage (DC)

VR

40

V

R e Average rectified forward current

Io

100

mA

t N Forward current surge peak (60Hz・1cyc) IFSM

1

A

o Junction temperature

Tj

125

°C

NStorage temperature

Tstg

-40 to +125

°C

Cathode

Anode

0.3±0.1

1.0±0.1

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Forward voltage

VF1

-

- 0.55

V IF=100mA

VF2

-

- 0.34

V IF=10mA

Reverse current

IR

-

-

30

mA VR=10V

Capacitance between terminals

Ct

- 6.0 -

pF VR=10V , f=1MHz

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2013.04 - Rev.C

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