RB715Z 查看數據表（PDF） - ROHM Semiconductor
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RB715Z Datasheet PDF : 8 Pages
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RB715Z
Schottky Barrier Diode
●Outline
VR
40
V
Io
30
mA
IFSM
0.2
A
●Features
High reliability
Small mold type
Low capacitance
●Inner Circuit
Data sheet
●Application
●Packaging Specifications
High speed switching
Packing
Embossed Tape
Reel Size(mm)
180
●Structure
Taping Width(mm)
8
Basic Ordering Unit(pcs)
8000
Epitaxial planar
Taping Code
T2L
Marking
3D
●Absolute Maximum Ratings (Ta = 25ºC unless otherwise stated)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
Reverse voltage
VRM
Duty≦0.5
VR
Reverse direct voltage
40
V
40
V
Average rectified forward current
Io
Glass epoxy mounted、60Hz half sin
waveform、resistive load、per diode
30
mA
Peak forward surge current
IFSM
60Hz half sin waveform、Non-repetitive、
one cycle、per diode、Ta=25ºC
Junction temperature
Tj
-
Storage temperature
Tstg
-
●Characteristics (Tj = 25ºC unless otherwise stated)
Parameter
Symbol
Conditions
Forward voltage
VF
IF=1mA
Reverse current
IR
Capacitance between terminals
Ct
VR=10V
VR=1V f=1MHz
※Caution：static electricity
0.2
A
125
℃
-40 ～ 125
℃
Value per diode
Min. Typ. Max. Unit
- - 0.37 V
- - 1 μA
- 2 - pF
Attention
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© 2016 ROHMCo., Ltd.All rights reserved.
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2016/09/28_Rev.001
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