RD12MVP1(2006) 查看數據表（PDF） - Mitsumi
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RD12MVP1 Datasheet PDF : 7 Pages
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD12MVP1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
TEST CIRCUIT (f=175MHz)
Vgg
Vdd
C1
C2 22uF,50V
W 19mm
19mm W
RD12MVP1
47pF
175MHz
4.7k Ohm
L2
47pF
RF-in 17mm
330pF
3.5mm
3mm 9.5mm
L1
9.5mm 3mm 14mm 9mm
100pF
24pF
54pF
RF-out
330pF
Note:Board material= glass-Epoxy Substrate
Micro strip line width=1.3mm/50OHM,er=4.8,t=0.8mm
W:Line width=1.0mm
L1:10.8nH,4Turns,D:0.43mm,1.66mm(outside diameter)
L2:43.7nH,6Turns,D:0.43mm,2.46mm(outside diameter)
C1,C2:2200pF
RD12MVP1
MITSUBISHI ELECTRIC
4/7
1st Jun. 2006
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