RF3145 查看數據表（PDF） - RF Micro Devices

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RF3145

QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE

RF Micro Devices 

RF3145

MODE

GSM

EDGE

Dual Mode Operation

RF INPUT

VRAMP

FIXED

Ramp from 0.2V to 1.6V

(GSM Burst Ramp Signal)

Linear ramp from AGC Amplifier/Source (GSM Burst FIXED

Ramp Signal)

TX ENABLE

High (Normal)

Low (Isolation)

High (Normal)

Low (Isolation)

VMODE

Low

High

RF3145 Power Amplifier

Simplified Block Diagram of a Single Band

TX ENABLE

VRAMP

VBATT

H(s)

AGC Amplifier

RF IN

TX ENABLE

RF OUT

Power On Sequence

3.0 V to 4.8 V

VBATT

TX_ENABLE

> 1.5 V

Power on Sequence:

Apply VBATT

Apply Band Select

Apply RF drive

Apply TX_Enable & VRAMP in unison

The Power Down sequence is in reverse

order to the Power On Sequence.

VRAMP starts 1us after TX_Enable

0.15 V to 1.6 V

VRAMP

VRAMP settles at 0.2 V 1us before TX_Enable goes low

*NOTE: VBATT must be present

before applying VREG to protect

the ESD circuit from damage.

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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

Rev A4 DS050919

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