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RJH60F4DPQ-A0 查看數據表(PDF) - Renesas Electronics
零件编号
产品描述 (功能)
生产厂家
RJH60F4DPQ-A0
Silicon N-Channel IGBT High Speed Power Switching
Renesas Electronics
RJH60F4DPQ-A0 Datasheet PDF : 8 Pages
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RJH60F4DPQ-A0
Forward Current vs. Forward Voltage (Typical)
100
80
60
40
20
V
GE
= 0 V
Ta = 25
°
C
Pulse Test
0
0
1
2
3
4
C-E Diode Forward Voltage V
CEF
(V)
Dynamic Input Characteristics (Typical)
800
16
V
GE
V
CE
600
V
CE
= 600 V
12
300 V
400
8
200
0
0
4
V
CE
= 600 V
300 V
I
C
= 30 A
0
20 40 60 80 100
Gate Charge Qg (nC)
Preliminary
10000
1000
Typical Capacitance vs.
Colloctor to Emitter Voltage
Cies
100
Coes
Cres
10
V
GE
= 0 V
f = 1 MHz
Ta = 25
°
C
1
0 50 100 150 200 250 300
Colloctor to Emitter Voltage V
CE
(V)
R07DS0325EJ0100 Rev.1.00
Apr 06, 2011
Page 4 of 7
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