PTF10154 查看數據表（PDF） - Ericsson

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PTF10154

85 Watts, 1.93–1.99 GHz GOLDMOS ® Field Effect Transistor

Ericsson  

PTF 10154

Electrical Characteristics (100% Tested)

Characteristic

Conditions

Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 mA

Zero Gate Voltage Drain Current VDS = 28 V, VGS = 0 V

Gate Threshold Voltage

VDS = 10 V, ID = 150 mA

Forward Transconductance

VDS = 10 V, ID = 2 A

Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Operating Junction Temperature

Total Device Dissipation at

Above 25°C derate by

Storage Temperature Range

Thermal Resistance (TCASE = 70°C)

Typical Performance

Narrowband Test Fixture Performance

12

60

Gain

9

50

Ef f iciency

40

6

3

0

1900

VDD = 28 V, IDQ = 1.15 A

30

POUT = 85 W

-20

5

-10

Return Loss 10

-0

1920 1940 1960 1980 2000

Frequency (MHz)

e

Symbol

V(BR)DSS

IDSS

VGS(th)

gfs

Min

65

—

3.0

—

Typ Max Units

—

—

Volts

—

5.0

mA

—

5.0

Volts

1.0

—

Siemens

Symbol

VDSS

VGS

TJ

PD

TSTG

RqJC

Value

65

±20

200

365

2.08

–40 to +150

0.48

Unit

Vdc

Vdc

°C

Watts

W/°C

°C

°C/W

Power Gain vs. Output Power

12

11

10

9

8

1

IDQ = 1.2

IDQ = 0.6

IDQ = 0.3

VDD = 28 V

f = 1990 MHz

10

100

Output Power (Watts)

2

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