LH28F800SU 查看數據表（PDF） - Sharp Electronics

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LH28F800SU

8M (512K × 16, 1M × 8) Flash Memory

Sharp Electronics 

LH28F800SU

8M (512K × 16, 1M × 8) Flash Memory

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

NOTE

tPLYL

tPLYH

RP » Low to 3/5 » Low (High)

0

µs

tYLPH

tYHPH

3/5 » Low (High) to RP» High

2

µs

1

tPL5V

tPL3V

RP » Low to VCC at 4.5 V MIN.

(to VCC at 3.0 V min or 3.6 V MAX.)

0

µs

2

tPLPH

RP » 'Low'

100

ns

t5VPH

VCC at 4.5 V to RP » High

100

ns

3

t3VPH

VCC at 3.0 V to RP » High

100

ns

3

tAVQV

Address Valid to Data Valid for VCC = 5 V ± 10%

100

ns

4

tPHQV

RP » High to Data Valid for VCC = 5 V ± 10%

480

ns

4

NOTES:

CE »0, CE »1 and OE » are switched low after Power-Up.

1. Minimum of 2 µs is required to meet the specified tPHQV times.

2. The power supply may start to switch concurrently with RP » going Low. RP » is required to stay low, until VCC stays at recommended

operating voltage.

3. The address access time and RP » high to data valid time are shown for 5 V VCC operation. Refer to the AC Characteristics Read Only

Operations 3.3 V VCC operation and all other speed options.

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