LH28F800SU 查看數據表（PDF） - Sharp Electronics
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LH28F800SU Datasheet PDF : 38 Pages
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8M (512K × 16, 1M × 8) Flash Memory
LH28F800SU
AC Characteristics for WE » - Controlled Command Write Operations1
TA = 0°C to +70°C
SYMBOL
PARAMETER
TYP.
tAVAV
tVPWH
tPHEL
tELWL
tAVWH
tDVWH
tWLWH
tWHDX
tWHAX
tWHEH
tWHWL
tGHWL
tWHRL
tRHPL
Write Cycle Time
VPP Setup to WE Going High
RP » Setup to CE » Going Low
CE » Setup to WE Going Low
Address Setup to WE Going High
Data Setup to WE Going High
WE Pulse Width
Data Hold from WE High
Address Hold from WE High
CE » Hold from WE High
WE Pulse Width High
Read Recovery before Write
WE High to RY »/BY » Going Low
RP » Hold from Valid Status Register
(CSR, GSR, BSR) Data and RY »/BY » High
tPHWL RP» High Recovery to WE Going Low
tWHGL
tQVVL
Write Recovery before Read
VPP Hold from Valid Status Register
(CSR, GSR, BSR) Data and RY »/BY » High
tWHQV1 Duration of Word/Byte Write Operation
12
tWHQV2 Duration of Block Erase Operation
VCC = 3.3 ± 0.3 V
MIN. MAX. UNITS
120
ns
100
ns
480
ns
10
ns
75
ns
75
ns
75
ns
10
ns
10
ns
10
ns
45
ns
0
ns
100
ns
NOTE
3
2, 6
2, 6
2
2
0
ns
3
1
µs
95
ns
0
µs
5
µs
4, 5
0.3
s
4
29
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