LH28F800SU 查看數據表（PDF） - Sharp Electronics
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LH28F800SU Datasheet PDF : 38 Pages
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LH28F800SU
8M (512K × 16, 1M × 8) Flash Memory
CEX (E)
tELWL
tWHEH
WE (W)
tAVWL
tWLWH
tWHAX
tWHWL
ADDRESSES (A)
VALID
tDVWH
tWHDX
DATA (D/Q)
HIGH-Z
DIN
Figuer 17. Page Buffer Write Timing Waveforms
28F800SUR-15
Erase and Word/Byte Write Performance
VCC = 3.3 V ± 0.3 V, TA = 0°C to +70°C
SYMBOL
PARAMETER
tWHRH1
tWHRH2
tWHRH3
Word/Byte Write Time
Block Write Time
Block Write Time
Block Erase Time
TYP.(1)
12
0.8
0.4
0.9
MIN.
MAX. UNITS
TEST CONDITIONS
µs
2.1
s Byte Write Mode
1.0
s Word Write Mode
10
s
Full Chip Erase Time
14.4
s
NOTE
2
2
2
2
2
VCC = 5.0 V ± 0.5 V, TA = 0°C to +70°C
SYMBOL
PARAMETER
tWHRH1
tWHRH2
tWHRH3
Word/Byte Write Time
Block Write Time
Block Write Time
Block Erase Time
TYP.(1)
8
0.54
0.27
0.7
Full Chip Erase Time
11.2
NOTES:
1. 25°C, VPP = 5.0 V.
2. Excludes System-Level Overhead.
MIN.
MAX. UNITS
TEST CONDITIONS
µs
2.1
s Byte Write Mode
1.0
s Word Write Mode
10
s
s
NOTE
2
2
2
2
2
36
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