RTR020P02TL 查看數據表（PDF） - ROHM Semiconductor

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RTR020P02TL

Switching (−20V, −2.0A)

ROHM Semiconductor 

Transistors

Switching (−20V, −2.0A)

RTR020P02

RTR020P02

zFeatures

1) Low On-resistance.

2) Built-in G-S Protection Diode.

3) Small and Surface Mount Package (TSMT3).

zApplication

Power switching, DC / DC converter.

zStructure

Silicon P-channel

MOS FET

zExternal dimensions (Unit : mm)

TSMT3

2.9±0.1

0.4

+0.1

−0.05

(3)

1.0MAX.

0.85±0.1

0.7±0.1

0~0.1

(1)

0.95 0.95

1.9±0.2

(2)

0.16

+0.1

−0.06

Each lead has same dimensions

Abbreviated symbol : TX

zPackaging specifications

Package

Type

Code

Basic ordering unit (pieces)

RTR020P02

Taping

TL

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Drain-source voltage

VDSS

−20

V

Gate-source voltage

VGSS

±12

V

Continuous

ID

±2.0

A

Drain current

Pulsed

IDP ∗1

±8.0

A

Source current

Continuous

IS

−0.8

A

(Body diode)

Pulsed

ISP ∗1

−3.2

A

Total power dissipation

PD ∗2

1.0

W

Channel temperature

Tch

150

°C

Range of Storage temperature

Tstg

−55 to +150

°C

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

zEquivalent circuit

(3)

(1)

∗2

∗1

(2)

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

(1) Gate

(2) Source

(3) Drain

zThermal resistance (Ta=25°C)

Parameter

Channel to ambient

Symbol

Rth (ch-A)

Limits

125

Unit

°C / W

1/4

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