S3C72B9 查看數據表（PDF） - Samsung

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S3C72B9

The S3C72B5/C72B7/C72B9 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47

Samsung 

S3C72B5/C72B7/C72B9/P72B9

ELECTRICAL DATA

Table 15-2. D.C. Electrical Characteristics (Continued)

(TA = – 40 °C to + 85 °C, VDD = 1.8 V to 5.5 V)

Parameter Symbol

Conditions

Min

Typ

Input High

Leakage

Current

ILIH1

VI = VDD

All input pins except those

specified below for ILIH2

–

–

ILIH2

VI = VDD

Xin, Xout, XTin, and XTout

Input Low

ILIL1

VI = 0 V

–

–

Leakage

Current

All input pins except RESET, Xin,

Xout, XTin, and XTout

ILIL2

VI = 0 V

RESET, Xin, Xout, XTin, and XTout

Output High

Leakage

Current

ILOH

VO = VDD

All output pins

–

–

Output Low

Leakage

Current

ILOL

VO = 0 V

All output pins

–

–

Pull-Up

Resistor

RLI

VI = 0 V; VDD = 5 V

Ports 0–4, ports 6–13

25

50

LCD Voltage

Dividing

Resistor

RL2

RLCD

VDD = 3 V

VI = 0 V; VDD = 5 V, RESET

VDD = 3 V

–

50

100

100

250

200

500

40

60

|VLC1-COMi|

Voltage Drop

(i = 0–15)

|VLC1-SEGx|

Voltage Drop

(x = 0–79)

VDC – 15 µA per common pin

VDS – 15 µA per segment pin

–

–

–

–

VLC2 Output

Voltage

VLC3 Output

Voltage

VLC2

VLC3

VDD = 1.8 V to 5.5 V, 1/5 bias

LCD clock = 0 Hz, VLC1 = VDD

0.8 VDD– 0.2 0.8 VDD

0.6 VDD– 0.2 0.6 VDD

VLC4 Output

Voltage

VLC5 Output

Voltage

VLC4

VLC5

0.4 VDD– 0.2 0.4 VDD

0.2 VDD– 0.2 0.2 VDD

Max

3

20

–3

– 20

3

–3

100

200

400

800

90

120

120

0.8 VDD– 0.2

0.6 VDD– 0.2

0.4 VDD– 0.2

0.2 VDD– 0.2

Units

µA

µA

µA

µA

kΩ

kΩ

mV

V

15-3

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