IRF520 查看數據表（PDF） - Intersil
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IRF520 Datasheet PDF : 7 Pages
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IRF520
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
ISD
Modified MOSFET Symbol
D
Showing the Integral
Pulse Source to Drain Current (Note 3)
ISDM Reverse P-N Junction Diode
G
MIN TYP MAX UNITS
-
-
9.2
A
-
-
37
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
VSD
trr
QRR
TJ = 25oC, ISD = 9.2A, VGS = 0V (Figure 13)
TJ = 25oC, ISD = 9.2A, dISD/dt = 100A/µs
TJ = 25oC, ISD = 9.2A, dISD/dt = 100A/µs
-
-
2.5
V
5.5 100 240
ns
0.17 0.5 1.1
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 640mH, RG = 25Ω, peak IAS = 9.2A.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
10
8
6
4
2
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
1 0.5
0.2
0.1
0.05
0.1 0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
1
10
4-174
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