SDM4435 查看數據表（PDF） - Samhop Mircroelectronics

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SDM4435

P-Channel Enhancement Mode MOSFET

Samhop Mircroelectronics 

S DM4435

E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)

P a ra meter

S ymbol

C ondition

Min Typ C Max Unit

OFF CHARACTERISTICS

5

Drain-S ource Breakdown Voltage

BVDSS

VGS =0V, ID =-250uA

-30

V

Zero Gate Voltage Drain C urrent

IDSS

VDS =-24V, VGS =0V

-1 uA

Gate-Body Leakage

ON CHARACTERISTICS b

IGSS

VGS = 25V, VDS =0V

100 nA

Gate Threshold Voltage

V G S (th)

VDS =VGS, ID = -250uA -1 -1.6 -3 V

Drain-S ource On-S tate R esistance R DS(ON)

VGS = -10V, ID =-8.0A

VGS = -4.5V, ID = -5.0A

15 20 m-ohm

22 35 m-ohm

On-S tate Drain Current

ID(ON)

VDS = -5V, VGS = -10V -20

A

Forward Transconductance

gFS

VDS =-15V, ID = - 8.0A

6

S

DYNAMIC CHARACTERISTICS c

Input Capacitance

C IS S

Output Capacitance

COSS

R everse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICS c

VDS =-15V, VGS = 0V

f =1.0MHZ

1199

PF

362

PF

137

PF

Turn-On Delay Time

R ise Time

Turn-Off Delay Time

tD(ON)

VD = -15V,

tr

ID = -1A,

VGEN = - 10V,

tD(O F F )

R GEN = 6 -ohm

17.6

ns

17.4

ns

169

ns

Fall Time

tf

95.4

ns

Total Gate C harge

Gate-S ource Charge

Gate-Drain C harge

VDS=-15V, ID=-8A,VGS=-10V

33.6

nC

Qg

VDS=-15V, ID=-8A,VGS=-4.5V

17.3

nC

Qgs

VDS =-15V, ID = -8A,

Qgd

VGS =-10V

3.3

nC

8.1

nC

2

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