SH8M70(2009) 查看數據表（PDF） - ROHM Semiconductor
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SH8M70 Datasheet PDF : 8 Pages
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4V Drive Nch+Pch MOSFET
SH8M70
Structure
Silicon N-channel / P-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Power switching, DC / DC converter.
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
SH8M70
Taping
TB
2500
Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
Unit
N-ch
P-ch
Drain-source voltage
VDSS
250
−250
V
Gate-source voltage
VGSS
30
−20
V
Drain current
Continuous
ID
±3.0
±2.5
A
Pulsed
IDP ∗1
±12
±10
A
Source current
Continuous
IS
1.0
−1.0
A
(Body diode)
Pulsed
ISP ∗1
12
−10
A
Total power dissipation
PD ∗2 2.0(TOTAL) 1.4(ELEMENT)
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10μs, Duty cycle≤1%
∗2 MOUNTED ON A CERAMIC BOARD.
Inner circuit
(8)
(7) (6)
(5) (8) (7) (6) (5)
∗2
∗2
(1) (2) (3) (4)
∗1
∗1
(1)
(2) (3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
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○c 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
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