SH8M70 查看數據表（PDF） - ROHM Semiconductor

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SH8M70

10V Drive Nch+Pch MOSFET

ROHM Semiconductor 

SH8M70

N-ch

Electrical characteristics (Ta=25C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Gate-source leakage

IGSS

−

− ±10 μA VGS=±25V, VDS=0V

Drain-source breakdown voltage V(BR) DSS 250 −

Zero gate voltage drain current IDSS

−

−

−

V ID=1mA, VGS=0V

25 μA VDS=250V, VGS=0V

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

VGS (th)

∗

RDS (on)

Yfs ∗

2.0

−

0.75

−

1.25

−

4.0

1.63

−

V VDS=10V, ID=1mA

Ω ID=1.5A, VGS=10V

S ID=1.5A, VDS=10V

Input capacitance

Ciss

− 180 −

pF VDS=25V

Output capacitance

Coss

−

70

−

pF VGS=0V

Reverse transfer capacitance Crss

− 20 − pF f=1MHz

Turn-on delay time

td (on) ∗

−

10

−

ns ID=1.5A, VDD 125V

Rise time

tr ∗ −

20

−

ns VGS=10V

Turn-off delay time

td (off) ∗

−

20

−

ns RL=83Ω

Fall time

tf ∗ −

25

−

ns RG =10Ω

Total gate charge

Qg ∗ −

5.2

−

nC VDD 125V

Gate-source charge

Qgs ∗ −

2.1

−

nC VGS=10V ID=3A

Gate-drain charge

Qgd ∗ −

1.2

−

nC RL=42Ω RG =10Ω

∗Pulsed

Body diode characteristics (Source-Drain) (Ta=25C)

Parameter

Forward voltage

∗Pulsed

Symbol Min. Typ. Max. Unit

VSD ∗ −

− 1.5 V

Conditions

IS=3A, VGS=0V

Data Sheet

www.rohm.com

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○c 2010 ROHM Co., Ltd. All rights reserved.

2010.06 - Rev.B

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