SH8M70 查看數據表（PDF） - ROHM Semiconductor

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SH8M70

10V Drive Nch+Pch MOSFET

ROHM Semiconductor 

SH8M70

P-ch

Electrical characteristics (Ta=25C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Gate-source leakage

IGSS

−

− ±10 μA VGS=±15V, VDS=0V

Drain-source breakdown voltage V(BR) DSS −250 −

−

V ID= −1mA, VGS=0V

Zero gate voltage drain current IDSS

−

− −25 μA VDS= −250V, VGS=0V

Gate threshold voltage

VGS (th) −2.0 − −4.0 V VDS= −10V, ID= −1mA

Static drain-source on-state

resistance

RDS

∗

(on)

−

2.2 2.8

Forward transfer admittance

Yfs ∗ 1.0

−

−

Ω ID= −1.25A, VGS= −10V

S ID= −1.25A, VDS= −10V

Input capacitance

Ciss

− 250 −

pF VDS= −25V

Output capacitance

Coss

−

40

−

pF VGS=0V

Reverse transfer capacitance Crss

− 10 − pF f=1MHz

Turn-on delay time

td (on) ∗

−

9

−

ns ID= −1.25A, VDD −125V

Rise time

tr ∗ −

15

−

ns VGS= −10V

Turn-off delay time

td (off) ∗

−

30

−

ns RL=100Ω

Fall time

tf ∗ −

20

−

ns RG =10Ω

Total gate charge

Qg ∗ −

8

− nC VDD −125V, ID= −2.5A

Gate-source charge

Qgs ∗ −

2.5

−

nC VGS= −10V

Gate-drain charge

Qgd ∗ −

2.8

−

nC RL=50Ω, RG =10Ω

∗Pulsed

Body diode characteristics (Source-Drain) (Ta=25C)

Parameter

Forward voltage

∗Pulsed

Symbol Min. Typ. Max. Unit

VSD ∗ −

− −1.5 V

Conditions

IS=−2.5A, VGS=0V

Data Sheet

www.rohm.com

3/7

○c 2010 ROHM Co., Ltd. All rights reserved.

2010.06 - Rev.B

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