SH8M70 查看數據表（PDF） - ROHM Semiconductor
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SH8M70 Datasheet PDF : 8 Pages
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SH8M70
10 VDS=10V
Pulsed
1
Ta=-25°C
0.1
25°C
75°C
75°C
0.01
0.01
0.1
1
10
Drain Current : ID(A)
Fig.10 Forward Transfer Admittance
vs. Drain Current
P-ch
Electrical characteristic curves
1000
Ciss
100
Coss
10
Crss
f=1MHz
VGS=0V
Ta=25°C
1 Pulsed
0.01 0.1
1
10 100 1000
Drain-Source Voltage : -VDS(V)
Fig.1 Typical Capacitance vs.
Drain-Source Voltage
10
VDS=-10V
Pulsed
1
Ta=-25°C
0.1
25°C
75°C
125°C
0.01
0
2
4
6
8
Gate-Source Voltage : −VGS(V)
Fig.4 Typical Transfer Characteristics
5
VDS=10V
ID=1mA
4
3
2
1
0
-50 -25 0 25 50 75 100 125 150
Channel Temperature : Tch (°C)
Fig.11 Gate Threshold Voltage
vs. Channel Temperature
Data Sheet
2
VGS=10V
1.8
9V
1.6
8V
6V
7V
1.4
1.2
5V
1
0.8
0.6
0.4
0.2
0
0
4V
3V
2
4
6
8
10
Drain-Sourse Voltage : VDS (V)
Fig.12 Typical Output Characteristics
10000
1000
tf
100
td(off)
td(on)
10
Ta=25°C
VDD= −125V
VGS= −10V
RG=10Ω
Pulsed
tr
1
0.01
0.1
1
10
Drain Current : -ID (A)
Fig.2 Switching Characteristics
10
9
8
7
6
5
4
3
ID=-2.5A
2
-1.25A
1 Ta=25°C
0 Pulsed
0
5
10
15
20
Gate-Source Voltage : -VGS(V)
Fig.5 Static Drain-Source On-State
Resistance vs. Gate-Source Voltage
15
10
5
Ta=25°C
VDD=−125V
ID=−2.5A
Pulsed
0
0 1 2 3 4 5 6 7 8 9 10
Total Gate Charge : Qg(nC)
Fig.3 Dynamic Input Characteristics
10
1
Ta=-25°C
25°C
75°C
125°C
VGS=0V
Pulsed
0.1
0 0.2 0.4 0.6 0.8 1 1.2
Source-Drain Voltage : -VSD(V)
Fig.6 Source Current vs.
Source-Drain Voltage
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2010.06 - Rev.B
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