SIHFP21N60L-E3 查看數據表（PDF） - Vishay Semiconductors
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SIHFP21N60L-E3 Datasheet PDF : 8 Pages
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IRFP21N60L, SiHFP21N60L
Vishay Siliconix
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
0.1
1
10
100
1000
10000
VDS, Drain-to-Source Voltage (V)
Fig. 9 - Maximum Safe Operating Area
25
20
15
10
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 11a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 11b - Switching Time Waveforms
5
0
25
50
75
100 125 150
TC , Case Temperature (°C)
Fig. 10 - Maximum Drain Current vs. Case Temperature
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
P DM
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91206
S-81273-Rev. B, 16-Jun-08
www.vishay.com
5
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