SKM 500 GA 174 D
10
ICSC/ICN
8
6
4
25°C
FIGUR7.XLS-V1
VC = 1200 V 800
IC = 400 A A
RG = 3 Ω
Lext ≤ 50 nH 600
self-limiting
125°C
400
m500ga17.xls - 8
Tj = 150 °C
VGE ≥ 15V
see rem. 5)
2
0
10 VGE 12
14
16
18 V 20
Fig. 7 Short circuit current vs. turn-on gate voltage
200
IC
0
0 TC 20 40 60 80 100 120 140 °C160
Fig. 8 Rated current vs. temperature IC = f (TC)
1000
A
VGE
800
=
17V
15V
600
13V
11V
9V
400
m500ga17.xls - 9
1000
A
800
600
400
VGE=
17V
15V
13V
11V
9V
m500ga17.xls - 10
200
IC
0
0 VCE 1
2
3
4V 5
Fig. 9 Typ. output characteristic, tp = 80 µs; 25 °C
200
IC
0
0 VCE 1
2
3
4V 5
Fig. 10 Typ. output characteristic, tp = 80 µs; 125 °C
Pcond(t) = VCEsat(t) · IC(t)
VCEsat(t) = VCE(TO)(Tj) + rCE(Tj) · IC(t)
VCE(TO)(Tj) ≤ 1,6 + 0,001 (Tj –25) [V]
typ.: rCE(Tj) = 0,003 + 0,000008 (Tj –25) [Ω]
max.: rCE(Tj) = 0,0041 + 0,000006 (Tj –25) [Ω]
valid
for
VGE
=
+
15
+2
–1
[V]; IC > 0,3 ICnom
Fig. 11 Saturation characteristic (IGBT)
Calculation elements and equations
© by SEMIKRON
1000
A
800
m500ga17.xls - 12
600
400
200
IC
0
0 VG 2
4
6
8 10 12 V 14
Fig. 12 Typ. transfer characteristic, tp = 80 µs; VCE = 20 V
000828
B 6 – 75