SSF3624 查看數據表（PDF） - Silikron Semiconductor Co.,LTD.
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SSF3624 Datasheet PDF : 5 Pages
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SSF3624
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
IGSS
VGS=±20V,VDS=0V
±100
nA
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
1.0
2.5
V
VGS=4.5V, ID=3.9A
31
40
mΩ
VGS=10V, ID=6A
23
32
mΩ
VDS=15V,ID=5A
7
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
700
PF
Coss
VDS=24V,VGS=0V,
F=1.0MHz
200
PF
Crss
70
PF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
t d(on)
10
nS
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
VDS=15V,VGS=10V,RGEN=6Ω
20
nS
td(off)
ID=1A
45
nS
tf
45
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
18
nC
Qgs
VDS=15V,ID=5A,VGS=10V
3
nC
Qgd
5
nC
Body Diode Reverse Recovery Time
T rr
26
nS
IF=5A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge
Q rr
15
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1.7A
0.8
1.0
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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