SSF3626 查看數據表（PDF） - Silikron Semiconductor Co.,LTD.
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SSF3626 Datasheet PDF : 5 Pages
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SSF3626
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
IGSS
VGS=±20V,VDS=0V
±100
nA
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=4.5V, ID=4.9A
VGS=10V, ID=5.9A
VDS=10V,ID=5.9A
1.5
3
V
41
51
mΩ
25
35
mΩ
5
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
550
PF
Coss
VDS=15V,VGS=0V,
F=1.0MHz
100
PF
Crss
50
PF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
t d(on)
5
nS
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
VDS=15V,VGS=10V,RGEN=3..2Ω
25
nS
td(off)
ID=4.7A
12
nS
tf
10
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
9
nC
Qgs
VDS=15V,ID=5.9A,VGS=10V
1.8
nC
Qgd
1.7
nC
Body Diode Reverse Recovery Time
T rr
20
nS
IF=4.7A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge
Q rr
12
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=4.7A
1
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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