SSF3641 查看數據表（PDF） - Silikron Semiconductor Co.,LTD.
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SSF3641 Datasheet PDF : 7 Pages
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SSF3641
Zero Gate Voltage Drain Current
IDSS
VDS=-24V,VGS=0V
-1
μA
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
IGSS
VGS=±12V,VDS=0V
±100
nA
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250uA
VGS=-4.5V, ID=-4A
VGS=-10V, ID=-5A
VDS=-5V,ID=-5A
-0.7
-1.3
V
53
64
mΩ
41
49
mΩ
5
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
950
PF
Coss
VDS=-15V,VGS=0V,
F=1.0MHz
100
PF
Crss
75
PF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
t d(on)
12
nS
Turn-on Rise Time
Turn-Off Delay Time
tr
VDS=-15V,VGS=-10V,RGEN=3Ω
5
nS
td(off)
36
nS
Turn-Off Fall Time
tf
11
nS
Total Gate Charge
Gate-Source Charge
Qg
9
nC
Qgs
VDS=-15V,ID=-5A,VGS=-4.5V
2
nC
Gate-Drain Charge
Qgd
3
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-1A
-0.75 -1
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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