SSU2N60A 查看數據表（PDF） - Fairchild Semiconductor
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SSU2N60A Datasheet PDF : 7 Pages
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Advanced Power MOSFET
SSR/U2N60A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 µA (Max.) @ VDS = 600V
Lower RDS(ON) : 3.892 Ω (Typ.)
BVDSS = 600 V
RDS(on) = 5 Ω
ID = 1.8 A
D-PAK I-PAK
2
1
1
3
2
3
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 oC )
Continuous Drain Current (TC=100 oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O2
Avalanche Current
O1
Repetitive Avalanche Energy
O1
Peak Diode Recovery dv/dt
O3
Total Power Dissipation (TA=25oC )*
Total Power Dissipation (TC=25 oC )
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
1. Gate 2. Drain 3. Source
Value
600
1.8
1.1
6
+_ 30
141
1.8
4.4
3.0
2.5
44
0.35
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/ oC
oC
Thermal Resistance
Symbol
Characteristic
Typ.
R θJC
R θJA
R θJA
Junction-to-Case
--
Junction-to-Ambient *
--
Junction-to-Ambient
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
2.87
50
110
Units
oC /W
Rev. B
©1999 Fairchild Semiconductor Corporation
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