SST48CF008 查看數據表（PDF） - Silicon Storage Technology

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SST48CF008

CompactFlash Card

Silicon Storage Technology 

CompactFlash Card

SST48CF008 / 016 / 024 / 032 / 048 / 064 / 096 / 128 / 192 / 256

Data Sheet

2.3.7 Configuration Register (Attribute Memory) Write Timing specification

The Card Configuration write access time is defined as 100 ns. Detailed timing specifications are shown in Table 2-4.

TABLE 2-4: CONFIGURATION REGISTER (ATTRIBUTE MEMORY) WRITE TIMING

Speed Version

Item

Write Cycle Time

Write Pulse Width

Address Setup Time

Write Recovery Time

Data Setup Time for WE

Data Hold Time

Symbol

tc(W)

tw(WE)

tsu(A)

trec(WE)

tsu(D-WEH)

th(D)

IEEE Symbol

tAVAV

tWLWH

tAVWL

tWMAX

tDVWH

tWMDX

1. All times are in nanoseconds. DIN signifies data provided by the system to the CompactFlash card.

All AC specifications are guaranteed by design.

100 ns

Min1

Max1

100

60

10

15

40

15

T2-4.1 375

-Reg

tc(W)

An

-WE

tsu(A)

-CE

-OE

Din

tw(WE)

trec(WE)

tsu(D-WEH)

th(D)

Din Valid

375 ILL2-2.0

FIGURE 2-2: CONFIGURATION REGISTER (ATTRIBUTE MEMORY) WRITE TIMING DIAGRAM

©2001 Silicon Storage Technology, Inc.

16

S71125-03-000 9/01 375

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