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ST72681 查看數據表(PDF) - STMicroelectronics

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ST72681 Datasheet PDF : 32 Pages
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NAND interface
ST72681
4.2
4.2.1
4.2.2
NAND error correction
No NAND Flash memory arrays are guaranteed by manufacturers to be error-free. Error
occurrence depends on the Flash cell type (MLC or SLC).
The ST72681 embeds hardware and firmware mechanisms to correct the errors.
Hardware error correction
The ST72681 embeds a Reed-Solomon algorithm-based hardware cell. This cell directly
manages 512-byte data packets on the NAND I/O system.
Based on a data packet contents, the cell generates an 80-bit Error Correction Code (ECC)
consisting of 8 words each containing 10 bits.
During write operations to NAND memory, the 512-bytes of data and the ECC are stored
together in the same page. The ECC is stored in the corresponding Redundant Area (RA),
using 10 bytes.
During read operations, the 512-bytes of data and the 8 ECC words are read back and are
passed through the Reed-Solomon cell for decoding. The cell allows the correction of 4
symbols in this 520-symbol packet (512 symbols from data + 8 symbols from ECC).
The hardware cell gives 3 possible results:
No error detected: the data packet can be used as it is.
Correctable error detected: the corrected data are available in a specific 512-byte buffer
in the Reed-Solomon cell and are ready to use.
Uncorrectable error detected: data corruption is not repairable.
Firmware error management
The firmware defines the error correction possibilities with the corrected data packet.
When data is not repairable, the block is considered as bad and replaced by another one.
See below for further information.
4.3
4.3.1
Management of bad NAND blocks
NAND device manufacturers deliver their products with factory-marked bad blocks. This
marking depends on the manufacturer and the NAND type (page size, memory technology,
etc.). The ST72681 supports all bad block markings currently available on the market.
Bad block identification
During firmware initialization, the MCU scans the entire NAND configuration to identify bad
blocks.
A bad block is defined as follows:
5 different Block Status bytes are considered: 4 Status bytes from page 0 and 1 from an
other page (page 127 for MLC NAND; page 1 for SLC NAND).
The considered block is declared bad if 1 of these 5 bytes contains 4 bits or more at 0.
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