D90N03L 查看數據表（PDF） - STMicroelectronics

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D90N03L

N-channel 30V - 0.005Ω - 80A - DPAK/IPAK STripFET™ III Power MOSFET

STMicroelectronics 

STD90N03L - STD90N03L-1

Electrical characteristics

Table 6. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

Source-drain current

Source-drain current

(pulsed)

VSD(2) Forward on voltage

ISD=40A, VGS=0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=80A, di/dt = 100A/µs,

VDD=19 V, Tj= 150°C

(see Figure 15)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min. Typ. Max. Unit

80 A

320 A

1.3 V

36

ns

32

µC

1.8

A

5/16

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