GD3NB60HD 查看數據表（PDF） - STMicroelectronics
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GD3NB60HD Datasheet PDF : 10 Pages
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STGD3NB60HD
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCES
Collector-Emitter Voltage (VGS = 0)
VECR
Emitter-Collector Voltage
VGE
Gate-Emitter Voltage
IC
Collector Current (continuous) at TC = 25°C
IC
Collector Current (continuous) at TC = 100°C
ICM ( ) Collector Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
Tstg
Storage Temperature
Tj
Operating Junction Temperature
( ) Pulse width limited by safe operating area
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Value
600
20
± 20
10
6
24
50
0.4
–55 to 150
Unit
V
V
V
A
A
A
W
W/°C
°C
2.5
°C/W
100
°C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
VBR(CES) Collector-Emitter Breakdown IC = 250 µA, VGE = 0
600
V
Voltage
ICES
Collector cut-off
(VGE = 0)
VCE = Max Rating, TC = 25 °C
VCE = Max Rating, TC = 125 °C
50
µA
100
µA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ±20V , VCE = 0
±100 nA
ON (1)
Symbol
VGE(th)
VCE(sat)
Parameter
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
Test Conditions
VCE = VGE, IC = 250µA
VGE = 15V, IC = 3 A
VGE = 15V, IC = 3 A, Tj =125°C
Min.
3
Typ.
2.4
1.9
Max. Unit
5
V
2.8
V
V
2/10
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