STB20NM60A-1 查看數據表（PDF） - STMicroelectronics
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STB20NM60A-1
STMicroelectronics
STB20NM60A-1 Datasheet PDF : 12 Pages
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STB20NM60A-1/STP20NM60A/STF20NM60A
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VGS
Gate-source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (DC)
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
( ) Pulse width limited by safe operating area
(1) ISD ≤ 20A, di/dt ≤ 400 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
Value
STB20NM60A-1
STP20NM60A
STF20NM60A
±30
20
20(*)
12.6
12.6(*)
80
80(*)
192
45
1.2
0.36
15
--
2500
Unit
V
A
A
A
W
W/°C
V/ns
V
–55 to 150
°C
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Maximum Lead Temperature For Soldering Purpose
I2PAK/TO-220
0.65
62.5
300
TO-220FP
2.8
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Unit
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
600
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
±100 nA
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 10A
0.25
0.29
Ω
2/12
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