Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
零件编号
产品描述 (功能)
D95N04 查看數據表(PDF) - STMicroelectronics
零件编号
产品描述 (功能)
生产厂家
D95N04
N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 STripFET™ Power MOSFET
STMicroelectronics
D95N04 Datasheet PDF : 14 Pages
1
2
3
4
5
6
7
8
9
10
Next
Last
STD95N04 - STP95N04
Electrical characteristics
Table 5. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
t
d(on)
t
r
Turn-on delay time
Rise time
t
d(off)
t
f
Turn-off delay time
Falltime
V
DD
=20V, I
D
= 40A,
R
G
=4.7
Ω,
V
GS
=10V
(see Figure 15)
V
DD
=20V, I
D
= 40A,
R
G
=4.7
Ω,
V
GS
=10V
(see Figure 15)
Min. Typ. Max. Unit
15
ns
50
ns
40
ns
15
ns
Table 6.
Symbol
Source drain diode
Parameter
Test conditions
I
SD
I
SDM
(1)
V
SD
(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=80A, V
GS
=0
I
SD
=80A,
di/dt = 100A/µs,
V
DD
=30V, Tj=150°C
(see Figure 14)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
80 A
320 A
1.5 V
45
ns
60
nC
2.8
A
5/14
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]