STTH602C-Y(2012) 查看數據表（PDF） - STMicroelectronics
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STTH602C-Y Datasheet PDF : 7 Pages
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STTH602C-Y
Characteristics
Table 5.
Symbol
Dynamic characteristics
Parameter
trr Reverse recovery time
IRM Reverse recovery current
tfr Forward recovery time
VFP Forward recovery voltage
Test conditions
IF = 1 A, dIF/dt = -100 A/µs,
VR = 30 V, Tj = 25 °C
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25 °C
IF = 3 A, dIF/dt = 200 A/µs,
VR = 160 V, Tj = 125 °C
IF = 3 A, dIF/dt = 200 A/µs
VFR = 1.1 x VFmax, Tj = 25 °C
IF = 3 A, dIF/dt = 200 A/µs,
Tj = 25 °C
Min. Typ. Max. Unit
14 20 ns
21 30
4 5.5 A
24
ns
3.7
V
Figure 1. Peak current versus duty cycle
(per diode)
IM(A)
100
80
T
IM
dδ=tp/T
tp
60
P = 10 W
40
P = 5W
P = 3W
20
δ
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Figure 2.
IFM(A)
100
Forward voltage drop versus
forward current (typical values per
diode)
80
60
40
Tj=150°C
20
Tj=25°C
VFM(V)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Figure 3.
Forward voltage drop versus
forward current (maximum values
per diode)
Figure 4.
Relative variation of thermal
impedance junction to case versus
pulse duration
IFM(A)
100
Zth(j-c)/Rth(j-c)
1.0
90
Sing-le pulse
80
70
60
50
40
Tj=150°C
30
20
Tj=25°C
10
VFM(V)
0
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
Doc ID 023250 Rev 1
3/7
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