STTH602CBY-TR 查看數據表（PDF） - STMicroelectronics
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STTH602CBY-TR Datasheet PDF : 9 Pages
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Characteristics
STTH602C-Y
1
Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
IF(RMS)
IF(AV)
IFSM
Tstg
Tj
Repetitive peak reverse voltage
Forward rms current
Average forward current
δ = 0.5, square wave
Surge non repetitive forward current
Storage temperature range
Operating junction temperature range
200
V
11
A
Tc = 160 °C
Tc = 155 °C
3
A
6
tp = 10 ms sinusoidal
60
A
-65 to +175 °C
-40 to +175 °C
Symbol
Rth(j-c)
Rth(c)
Junction to case
Coupling
Table 3: Thermal parameters
Parameter
Per diode
Per device
Max. value
5
3
1
Unit
°C/W
When the two diodes 1 and 2 are used simultaneously:
ΔTj(diode 1) = P (diode 1) x Rth(j-c) (Per diode) + P (diode 2) x Rth(c)
Table 4: Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
IR(1)
VF(2)
Reverse leakage current
Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VR = VRRM
IF = 3 A
IF = 6 A
-
3
µA
-
3
30
- 0.98 1.1
-
0.8 0.95
V
-
1.1 1.25
-
0.9 1.05
Notes:
(1)Pulse test: tp = 5 ms, δ < 2%
(2)Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.85 x IF(AV) + 0.033 x IF2(RMS)
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DocID023250 Rev 2
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