STTH602CBY-TR 查看數據表（PDF） - STMicroelectronics

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STTH602CBY-TR

Automotive ultrafast recovery diode

STMicroelectronics 

Characteristics

1.1

Characteristics (curves)

Figure 1: Peak current versus duty cycle

(per diode)

100 IM(A)

T

IM

80

δ = tp/T

tp

60

P = 10 W

40

P= 5W

P= 3W

20

δ

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

STTH602C-Y

Figure 2: Forward voltage drop versus forward

current (typical values, per diode)

Figure 3: Forward voltage drop versus forward

current (maximum values, per diode)

Figure 4: Relative variation of thermal impedance

junction to case versus pulse duration (per diode)

Zth(j-c)/Rth(j-c)

1.0

Sing-le pulse

0.1

1.E-03

tp(s)

1.E-02

1.E-01

1.E+00

Figure 5: Junction capacitance versus reverse

applied voltage (typical values, per diode)

C(pF)

100

F = 1 MHz

Vosc = 30 mVRMS

Tj = 25 °C

Figure 6: Reverse recovery charges versus dIF/dt

(typical values, per diode)

10

VR(V)

1

1

10

100

1000

4/9

DocID023250 Rev 2

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