SUM110N04-02L(2001) 查看數據表（PDF） - Vishay Semiconductors
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SUM110N04-02L Datasheet PDF : 5 Pages
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New Product
SUM110N04-02L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
250
VGS = 10 thru 5 V
200
200
Transfer Characteristics
150
150
100
4V
50
0
0
3V
2
4
6
8
10
VDS – Drain-to-Source Voltage (V)
Transconductance
300
TC = –55_C
250
25_C
200
125_C
150
100
50
0
0
12000
20
40
60
80
100 120
ID – Drain Current (A)
Capacitance
10000
Ciss
8000
6000
4000
2000
Coss
Crss
0
0
8
16
24
32
40
VDS – Drain-to-Source Voltage (V)
Document Number: 70763
S-04970—Rev. B, 29-Oct-01
100
50
0
0
TC = 125_C
25_C
–55_C
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
0.004
0.003
On-Resistance vs. Drain Current
VGS = 4.5 V
0.002
VGS = 10 V
0.001
0.000
0
20
20
40
60
80
100 120
ID – Drain Current (A)
Gate Charge
16
VDS = 30 V
ID = 110 A
12
8
4
0
0
60
120
180
240
300
Qg – Total Gate Charge (nC)
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