SUP15P01-52 查看數據表（PDF） - Vishay Semiconductors
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SUP15P01-52 Datasheet PDF : 4 Pages
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SUP/SUB15P01-52
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
rDS(on)
gfs
VGS = 0 V, ID = –250 mA
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "8 V
VDS = –6.4 V, VGS = 0 V
VDS = –6.4 V, VGS = 0 V, TJ = 125_C
VDS = –6.4 V, VGS = 0 V, TJ = 175_C
VDS = –5 V, VGS = –4.5 V
VDS = –5 V, VGS = –2.5 V
VGS = –4.5 V, ID = –10 A
VGS = –4.5 V, ID = –10 A, TJ = 125_C
VGS = –4.5 V, ID = –10 A, TJ = 175_C
VGS = –2.5 V, ID = –5 A
VGS = –1.8 V, ID = –2 A
VDS = –5 V, ID = –10 A
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = –4 V, f = 1 MHz
VDS = –4 V, VGS = –4.5 V, ID = –10 A
VDD = –4 V, RL = 0.22 W
ID ] –15 A, VGEN = –4.5 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Is
ISM
VSD
trr
IRM(REC)
Qrr
IF = –15 A, VGS = 0 V
IF = –15 A, di/dt = 100 A/ms
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min Typ Max Unit
–8
V
–0.45
"100
nA
–1
–50
mA
–150
–25
A
–10
0.043 0.052
0.065
0.075
W
0.070
0.105
16
S
1300
430
pF
245
10.5
15
1.6
nC
2
10
20
16
25
ns
30
45
25
40
–15
A
–25
–1.5
V
45
75
ns
–1
–1.5
A
0.023 0.056
mC
www.vishay.com
2
Document Number: 71085
S-20966—Rev. C, 01-Jul-02
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