T35L3232B 查看數據表（PDF） - Taiwan Memory Technology
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T35L3232B Datasheet PDF : 19 Pages
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Preliminary T35L3232B
AC ELECTRICAL CHARACTERISTICS (Note 5) (0°C≤TA≤70°C;VCC=3.3V +0.3V/-0.165V)
DESCRIPTION
-3.8
-4
-4.5
UNITS
SYM. MIN MAX MIN MAX MIN MAX
NOTES
Clock(pipeline)
Clock cycle time
tKC
6.6
7.5
8.5
ns
Clock to output valid
tKQ
3.8
4
4.5
Clock to output invalid
tKQX 1.5
2
2
ns
Clock to output in Low-Z
tKQLZ 1.5
2
2
ns
Clock(flow-through)
Clock cycle time
tKC 10.5
15
15
ns
Clock to output valid
tKQ
9.0
10
11
Clock to output invalid
tKQX 3
3
3
ns
Clock to output in Low-Z
tKQLZ 3
3
3
ns
Output Times
Clock HIGH time
tKH
1.8
1.9
2.0
ns
Clock LOW time
tKL
1.8
1.9
2.0
ns
Clock to output in High-Z
tKQHZ
5
5
5 ns
OE to output valid
tOEQ
5
5
5 ns
OE to output in Low-Z
tOELZ 0
0
0
ns
OE to output in High-Z
tOEHZ
5
5
5 ns
Setup Times
Address
tAS
1.7
2.0
2.0
ns
Address Status( ADSC , ADSP ) tADSS 1.7
2.0
2.0
ns
Address Advance ( ADV )
tAAS 1.7
2.0
2.0
ns
Byte Write Enables
tWS 1.7
2.0
2.0
ns
( BW1~ BW4 , BWE , GW )
Data-in
tDS 1.7
2.0
2.0
ns
Chip Enables( CE , CE2 ,CE2)
tCES 1.7
2.0
2.0
ns
Hold Times
Address
tAH
0.5
0.5
0.5
ns
Address Status( ADSC , ADSP ) tADSH 0.5
0.5
0.5
ns
Address Advance ( ADV )
tAAH 0.5
0.5
0.5
ns
Byte Write Enables
tWH 0.5
0.5
0.5
ns
( BW1~ BW4 , BWE , GW )
Data-in
tDH
0.5
0.5
0.5
ns
Chip Enables( CE , CE2 ,CE2)
tCEH 0.5
0.5
0.5
ns
6, 7
6, 7
9
6, 7
6, 7
8, 10
8, 10
8, 10
8, 10
8, 10
8, 10
8, 10
8, 10
8, 10
8, 10
8, 10
8, 10
Taiwan Memory Technology, Inc. reserves the right P.9
to change products or specifications without notice.
Publication Date: FEB. 2000
Revision:0.A
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