TA1270 查看數據表（PDF） - Toshiba

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TA1270

TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC

Toshiba 

TA1270BF

MAXIMUM RATINGS (Ta = 25°C)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Supply Voltage

Input Pin Signal Voltage

Power Dissipation

Power Dissipation Reduction Rate

Operating Temperature

Storage Temperature

VCCmax

einmax

PD (Note 1)

1 / θja

Topr

Tstg

12

9

844

6.75

−20~65

−55~150

V

Vp-p

mW

mW / °C

°C

°C

Note 1: See figure below.

Note 2: Since the device is susceptible to surge, handle with care.

Note 3: This IC is not proof enough against a strong E-M field by CRT which may cause function errors and / or poor

characteristics.

Keeping the distance from CRT to the IC longer than 20 cm, or if cannot, placing shield metal over the IC, is

recommended in an application.

Fig. Power dissipation temperature reduction curve

14

2002-12-24

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