DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

TB62710 查看數據表(PDF) - Toshiba

零件编号
产品描述 (功能)
生产厂家
TB62710 Datasheet PDF : 19 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
TB62710P/F/FN
Electrical Characteristics (Topr = 25°C, VDD = 5 V, VCC = 17 V unless otherwise specified)
Characteristic
Output leakage current
Output voltage
SERIAL-OUT
1, 2
Output current
(including current skewing)
Current skew
Supply voltage regulation
Pull-up resistor
Pull-down resistor
VDD
Supply current
VCC
Symbol
Test
circuit
Conditions
Min Typ. Max Unit
ILEAK
VOH
VOL
VCC = 17.0 V
IOH = −1.0 mA
IOL = 1.0 mA
⎯ −10 µA
0.4
V
4.6
IOUT1
VCC = 4 V,
VOUT = VCC 2.0 V
REXT = 360
62.1
73.0 83.9
IOUT2
VCC = 4 V,
VOUT = VCC 2.0 V
REXT = 620
34.0
40.0 46.0
mA
IOUT3
VCC = 3.5 V,
VOUT = VCC 1.5 V
REXT = 620
32.3
38.0 43.7
IOUT
Same as IOUT1, IOUT2 and IOUT3
⎯ ±1.5 ±6.0 %
%/VDD
Ta = −40~85°C
REXT = 360 Ω ⎯
1.5 5.0 %/V
Rin (Up)
150 300 600 k
Rin (Down)
100 200 400 k
IDD (OFF)
All outputs = OFF REXT = OPEN
0.6
1.2
IDD (ON) 1
DATA = ALL “H”,
All outputs = ON
(no load)
REXT = 360 Ω ⎯
7.5 10.0
DATA = ALL “H”,
IDD (ON) 2
All outputs = ON REXT = 620 Ω ⎯
4.0
7.0
(no load)
mA
DATA = ALL “L”,
ICC (OFF)
All outputs = OFF REXT = 620 Ω ⎯
0.5
1.0
(no load)
ICC (ON)
DATA = ALL “H”,
All outputs = ON
(no load)
REXT = 360 Ω ⎯
42.0 52.0
7
2006-06-14

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]