TC646B/TC648B/TC649B
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits are specified for -40°C < TA < +85°C, VDD = 3.0V to 5.5V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Pulse-Width Modulator
PWM Frequency
fPWM
26
30
SENSE Input (TC646B & TC649B)
SENSE Input Threshold Voltage
VTH(SENSE)
50
70
with Respect to GND
Blanking time to ignore pulse due
tBLANK
—
3.0
to VOUT turn-on
FAULT / OTF Output
Output Low Voltage
VOL
—
—
Missing Pulse Detector Timer
tMP
—
32/f
Start-up Timer
tSTARTUP
—
32/f
Diagnostic Timer
tDIAG
—
3/f
Note 1: Ensured by design, tested during characterization.
2: For VDD < 3.7V, tSTARTUP and tMP timers are typically 13/f.
34
Hz CF = 1.0 µF
90
mV
—
µsec
0.3
V IOL = 2.5 mA
—
sec TC646B and TC649B, Note 2
—
sec Note 2
—
sec TC646B and TC649B
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise noted, all parameters apply at VDD = 3.0V to 5.5V
Parameters
Sym
Min
Typ
Max
Units
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
TA
-40
—
+85
°C
TA
-40
—
+125
°C
TA
-65
—
+150
°C
Thermal Package Resistance, 8-Pin MSOP
θJA
—
200
—
°C/W
Thermal Package Resistance, 8-Pin SOIC
θJA
—
155
—
°C/W
Thermal Package Resistance, 8-Pin PDIP
θJA
—
125
—
°C/W
Conditions
DS21755B-page 4
2003 Microchip Technology Inc.