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TC7109 查看數據表(PDF) - TelCom Semiconductor Inc => Microchip

零件编号
产品描述 (功能)
生产厂家
TC7109
TelCom-Semiconductor
TelCom Semiconductor Inc => Microchip TelCom-Semiconductor
TC7109 Datasheet PDF : 21 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
TC7109
TC7109A
12-BIT µP-COMPATIBLE
ANALOG-TO-DIGITAL CONVERTERS
ABSOLUTE MAXIMUM RATINGS*
Positive Supply Voltage (GND to V+) ..................... +6.2V
Negative Supply voltage (GND to V) ....................... –9V
Analog Input Voltage (Low to High) (Note 1) ....... V+ to V
Reference Input Voltage (Low to High (Note 1) .. V+ to V
Digital Input Voltage (Pins 2–27) (Note 2) ..... GND –0.3V
Power Dissipation, TA < 70°C, (Note 3)
CerDIP ............................................................. 2.29W
Plastic DIP ....................................................... 1.23W
PLCC ............................................................... 1.23W
PQFP ............................................................... 1.00W
Operating Temperature Range
Plastic Package (C) ............................... 0°C to +70°C
Ceramic Package (I) ....................... – 25°C to +85°C
(M) ................... – 55°C to +125°C
Storage Temperature Range ............... – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
NOTES: 1. Input voltages may exceed supply voltages if input current is
limited to ±100 µA.
2. Connecting any digital inputs or outputs to voltages greater
than V+ or less than GND may cause destructive device latch-
up. Therefore, it is recommended that inputs from sources
other than the same power supply should not be applied to
the TC7109A before its power supply is established. In
multiple supply systems, the supply to the device should be
activated first.
3. This limit refers to that of the package and will not occur during
normal operation.
ELECTRICAL CHARACTERISTICS: All parameters with V+ = +5V, V= –5V, GND = 0V, TA = +25°C,
unless otherwise indicated.
Symbol Parameter
Test Conditions
Min Typ Max Unit
Analog
NL
CMRR
VCMR
eN
IIN
TCZS
TCFS
I+
IS
Overload Recovery Time
(TC7109A)
Zero Input Reading
Ratio Metric Reading
Nonlinearity (Max Deviation
From Best Straight Line Fit)
Roll-Over Error (Difference in
Reading for Equal Positive and
Negative Inputs Near (Full Scale)
Input Common-Mode
Rejection Ratio
Common-Mode Voltage
Range
Noise (P-P Value Not
Exceeded 95% of Time)
Leakage Current at Input
Zero Reading Drift
Scale-Factor
Temperature Coefficient
Supply Current
(V+ to GND)
Supply Current (V+ to V)
VIN = 0V
Full Scale = 409.6 mV
VIN = VREF
VREF = 204.8 mV
Full Scale = 409.6 mV to
2.048V Over Full Operating
Temperature Range
Full Scale = 409.6 mV to
2.048V Over Full Operating
Temperature Range
VCM ±1V, VIN = 0V
Full Scale = 409.6 mV
Input High, Input Low,
and Common Pins
VIN = 0V
Full Scale = 409.6 mV
VIN, All Packages: +25°C
C Device: 0°C TA +70°C
I Device: –25°C TA +85°C
M Device: –55°C TA +125°C
VIN = 0V
VIN = 408.9 mV = >77708
Reading, Ext Ref = 0 ppm/°C
VIN = 0V, Crystal Oscillator
3.58 MHz Test Circuit
Pins 2–21, 25, 26, 27, 29 Open
– 00008
0
±00008
1 Measurement
Cycle
+00008 Octal Reading
37778
–1
37778
40008
±0.2
40008 Octal Reading
+1 Count
–1
±0.02 +1 Count
50
µV/V
V+1.5
V+–1 V
15
µV
1
10 pA
20
100 pA
100
250 pA
2
5 nA
0.2
1 µV/°C
1
5 µV/°C
700 1500 µA
700 1500 µA
3-92
TELCOM SEMICONDUCTOR, INC.

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