Philips Semiconductors
Low voltage versatile telephone
transmission circuit with dialler interface
Product specification
TEA1110A
CHARACTERISTICS
Iline = 15 mA; VEE = 0 V; RSLPE = 20 Ω; AGC pin connected to VEE; Zline = 600 Ω; f = 1 kHz; Tamb = 25 °C;
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
Supplies (pins VLN, VCC, SLPE and REG)
Vref
stabilized voltage between LN and
SLPE
VLN
DC line voltage
VLN(exR)
∆VLN(T)
DC line voltage with an external
resistor RVA
DC line voltage variation with
temperature referred to 25 °C
Iline = 1 mA
Iline = 4 mA
Iline = 15 mA
Iline = 140 mA
RVA(SLPE−REG) = 27 kΩ
Tamb = −25 to +75 °C
ICC
VCC
RCCint
internal current consumption
VCC = 2.9 V
supply voltage for peripherals
IP = 0 mA
equivalent supply voltage resistance IP = 0.5 mA
Microphone amplifier (pins MIC+ and MIC−)
Zi
input impedance
differential between pins
MIC+ and MIC−
Gvtx
∆Gvtx(f)
single-ended between pins
MIC+/MIC− and VEE
voltage gain from MIC+/MIC− to LN
gain variation with frequency
referred to 1 kHz
VMIC = 4 mV (RMS)
f = 300 to 3400 Hz
∆Gvtx(T)
gain variation with temperature
referred to 25 °C
Tamb = −25 to +75 °C
CMRR
common mode rejection ratio
VLN(max)(rms) maximum sending signal
(RMS value)
Vnotx
noise output voltage at pin LN; pins
MIC+/MIC− shorted through 200 Ω
Iline = 15 mA; THD = 2%
Iline = 4 mA, THD = 10%
psophometrically
weighted (P53 curve)
3.1
−
−
3.35
−
−
−
−
−
−
−
−
42.7
−
−
−
1.4
−
−
3.35 3.6
1.6 −
2.3 −
3.65 3.95
−
6.9
4.4 −
±30 −
1.1 1.4
2.9 −
550 620
64 −
32 −
43.7 44.7
±0.2 −
±0.3 −
80 −
1.7 −
0.8 −
−78.5 −
Receiving amplifier (pins IR, QR and GAR)
Zi
Gvrx
∆Gvrx(f)
input impedance
voltage gain from IR to QR
gain variation with frequency
referred to 1 kHz
−
VIR = 4 mV (RMS)
32
f = 300 to 3400 Hz
−
∆Gvrx(T)
gain variation with temperature
referred to 25 °C
Tamb = −25 to +75 °C
−
20 −
33 34
±0.2 −
±0.3 −
UNIT
V
V
V
V
V
V
mV
mA
V
Ω
kΩ
kΩ
dB
dB
dB
dB
V
V
dBmp
kΩ
dB
dB
dB
1997 Apr 22
11