Philips Semiconductors
0.95 V starting power unit
Preliminary specification
TEA1202TS
5 QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
DC-to-DC converter
UPCONVERSION
VI(up)
VO(up)
input voltage
output voltage
VI(start)
VO(uvlo)
start-up input voltage
undervoltage lockout voltage
DOWNCONVERSION
IL < 10 mA
note 1
VI(dwn)
VO(dwn)
input voltage
output voltage
CURRENT LEVELS
Iq(DCDC)
Ishdwn
ILX(max)
∆Ilim
quiescent current at pin UPOUT/DNIN
current in shut-down mode
maximum continuous current at
pins LX1 and LX2
current limit deviation
VLBI1 = VI(up) = 1.2 V
Tamb = 80 °C
Ilim set to 1.0 A
upconversion
downconversion
POWER MOSFETS
RDSon(N)
RDSon(P)
drain-to-source on-state resistance
drain-to-source on-state resistance
NFET; IDS = 100 mA;
Tj = 27 °C
PFET; IDS = −100 mA;
Tj = 27 °C
EFFICIENCY
η
efficiency upconversion
TIMING
see Fig.10; VO up to 3.3 V
VI = 1.2 V; IL = 100 mA
VI = 2.4 V; IL = 200 mA
fsw
fi(sync)
tstart
switching frequency
synchronization clock input frequency
start-up time
PWM mode
MIN. TYP. MAX. UNIT
VI(start) −
VO(uvlo) −
5.50 V
5.50 V
0.93 0.96 1.00 V
2.0
2.2
2.4
V
VO(uvlo) −
1.30 −
5.50 V
5.50 V
−
110 −
µA
−
65
−
µA
−
−
1.0 A
−12 −
−12 −
+12 %
+12 %
−
110 200 mΩ
−
125 250 mΩ
−
84
−
%
−
92
−
%
480 600 720 kHz
6
13
20
MHz
−
10
−
ms
2002 Mar 14
4