TEA1622P 查看數據表（PDF） - Philips Electronics
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TEA1622P Datasheet PDF : 16 Pages
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Philips Semiconductors
TEA1622P
STARplugTM
Table 6: Characteristics …continued
Tamb = 25 °C; no overtemperature; all voltages are measured with respect to ground; currents are positive when flowing into
the IC; unless otherwise specified.
Symbol
Parameter
Conditions
Min Typ Max Unit
GV(erroramp) voltage gain of error amplifier
VREG(clamp) clamping voltage on pin REG
Valley switching recognition
IREG = 6 mA
-
20
-
dB
-
-
7.5 V
dV/dtvalley
fvalley
td(valley-on)
valley recognition
ringing frequency for valley switching
delay from valley recognition to
switch-on
N × Vo = 100 V
−102 -
200 550
-
150
+102
800
-
V/µs
kHz
ns
Output stage (FET)
IL(drain)
VBR(drain)
RDSon
drain leakage current
drain breakdown voltage
drain-source on-state resistance
tdrain(f)
drain fall time
VDRAIN = 650 V
Tj > 0 °C
ISOURCE = −0.06 A
Tj = 25 °C
Tj = 100 °C
VDRAIN(switch_on) = 300 V;
no external capacitor at pin
DRAIN
-
-
650 -
-
12
-
17
-
75
125 µA
-
V
13.8 Ω
19.6 Ω
-
ns
Temperature protection
Tprot(max)
maximum threshold temperature
Tprot(hys)
threshold temperature hysteresis
Overcurrent and short winding protection: pin SOURCE
150 160 170 °C
-
2
-
°C
Vsource(max)
Vswp
td(propagation)
overcurrent protection voltage
short winding protection voltage
delay from detecting Vsource(max) to
switch-off
dV/dt = 0.1 V/µs
dV/dt = 0.5 V/µs
dV/dt = 0.5 V/µs
0.47 0.50 0.53 V
0.7 0.75 0.8 V
-
160 185 ns
tleb
leading edge blanking time
both overcurrent and short
winding protection
250 350 450 ns
9397 750 12578
Product data sheet
Rev. 01 — 17 March 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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