TGA2513-SM 查看數據表（PDF） - TriQuint Semiconductor

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TGA2513-SM

2-20 GHz LNA/Gain Block

TriQuint Semiconductor 

SYMBOL

Gain

Advance Product Information

July 26, 2007

TGA2513-SM

TABLE II

RF CHARACTERIZATION TABLE

(TA = 25 °C, Nominal)

Vd = 5V, Id = 75 mA Vg2 = 2V Vg1 = ~ -60 mV

PARAMETER

Small Signal Gain

TEST

CONDITION

f = 2-20 GHz

NOMINAL

17

UNITS

dB

IRL

Input Return Loss

f = 2-20 GHz

12

dB

ORL

Output Return Loss f = 2-20 GHz

10

dB

NF

Noise Figure

f = 2-20 GHz

3

dB

Output Power @

P1dB

1dB Gain

f = 2-20 GHz

16

dBm

Compression

TABLE III

THERMAL INFORMATION

Parameter

Test Conditions

θJC Thermal Resistance

(channel to backside of

carrier)

Vd = 5 V

Id = 75 mA

Pdiss = 0.375 W

TCH

θJC

TM

(oC) (°C/W) (HRS)

97

32

8.1 E+6

Note: Worst case condition with no RF applied, 100% of DC power is

dissipated. Package temperature @ 85 °C

3

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

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