TGA4530 查看數據表（PDF） - TriQuint Semiconductor

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TGA4530

K Band High Linearity Power Amplifier

TriQuint Semiconductor 

TGA4530

Assembly Process Notes

Reflow process assembly notes:

• Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 0C (30 seconds max).

• An alloy station or conveyor furnace with reducing atmosphere should be used.

• No fluxes should be utilized.

• Coefficient of thermal expansion matching is critical for long-term reliability.

• Devices must be stored in a dry nitrogen atmosphere.

Component placement and adhesive attachment assembly notes:

• Vacuum pencils and/or vacuum collets are the preferred method of pick up.

• Air bridges must be avoided during placement.

• The force impact is critical during auto placement.

• Organic attachment can be used in low-power applications.

• Curing should be done in a convection oven; proper exhaust is a safety concern.

• Microwave or radiant curing should not be used because of differential heating.

• Coefficient of thermal expansion matching is critical.

Interconnect process assembly notes:

• Thermosonic ball bonding is the preferred interconnect technique.

• Force, time, and ultrasonics are critical parameters.

• Aluminum wire should not be used.

• Maximum stage temperature is 200 0C.

Ordering Information

Part

TGA4530

Package Style

GaAs MMIC Die

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should

be observed during handling, assembly and test.

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TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Web: www.triquint.com

Oct 2008 © Rev A

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