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TGA4530 查看數據表(PDF) - TriQuint Semiconductor
零件编号
产品描述 (功能)
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TGA4530
K Band High Linearity Power Amplifier
TriQuint Semiconductor
TGA4530 Datasheet PDF : 12 Pages
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TGA4530
TABLE III
THERMAL INFORMATION
PARAMETER
θ
JC
Thermal Resistance
(channel to Case)
θ
JC
Thermal Resistance
(channel to Case)
TEST CONDITIONS
Vd = 7 V
Id = 825 mA
P
diss
= 5.78 W
Small Signal
Vd = 7 V
Id = 1050 mA @ Psat
P
out
= 1.6 W (RF)
P
diss
= 5.75 W
Tchannel
θ
JC
(°C)
(°C/W)
150
14.7
150
14.7
T
m
(HRS)
1.0E+6
1.0E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 65
o
C baseplate temperature.
.
Median Lifetime (Tm) vs. Channel Temperature
1.E+13
1.E+12
1.E+11
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
FET3
25
50
75
100
125
150
175
200
Channel Temperature (
°
C)
3
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Web: www.triquint.com
Oct 2008 © Rev A
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