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TISP4070H3LMFRS(2010) 查看數據表(PDF) - Bourns, Inc

零件编号
产品描述 (功能)
生产厂家
TISP4070H3LMFRS
(Rev.:2010)
Bourns
Bourns, Inc Bourns
TISP4070H3LMFRS Datasheet PDF : 13 Pages
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TISP4xxxH3LM Overvoltage Protector Series
Description (Continued)
This TISP4xxxH3LM range consists of seventeen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are supplied
in a DO-92 (LM) cylindrical plastic package. The TISP4xxxH3LM is a straight lead DO-92 supplied in bulk pack and on tape and reel. The
TISP4xxxH3LMF is a formed lead DO-92 supplied only on tape and reel. For lower rated impulse currents in the DO-92 package, the 50 A
10/1000 TISP4xxxM3LM series is available.
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
‘4070
Symbol
Value
Unit
± 58
‘4080
± 65
OBSOLETE ‘4095
‘4115
‘4125
‘4145
‘4165
Repetitive peak off-state voltage, (see Note 1)
‘4180
‘4220
‘4240
‘4250
‘4260
‘4290
‘4300
‘4350
‘4395
‘4400
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current)
VDRM
± 75
± 90
±100
±120
±135
±145
±160
±180
±190
±200
±220
±230
±275
±320
±300
500
300
V
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
250
5/200 µs (VDE 0433, 10/700 µs voltage wave shape)
220
0.2/310 µs (I 31-24, 0.5/700 µs voltage wave shape)
5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape)
ITSP
200
A
200
5/310 µs (FTZ R12, 10/700 µs voltage wave shape)
200
5/320 µs (FCC Part 68, 9/720 µs voltage wave shape)
200
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
160
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
100
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
ITSM
55
60
A
2.3
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 100 A
Junction temperature
Storage temperature range
diT/dt
TJ
Tstg
400
-40 to +150
-65 to +150
A/µs
°C
°C
NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.
2. Initially, the TISP4xxxH3LM must be in thermal equilibrium with TJ = 25 °C.
3. The surge may be repeated after the TISP4xxxH3LM returns to its initial conditions.
4. See Applications Information and Figure 11 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient
temperatures above 25 °C.
NOVEMBER 1997 - REVISED JANUARY 2010
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.

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