TLP331 查看數據表（PDF） - Toshiba
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TLP331 Datasheet PDF : 8 Pages
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Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Reverse current
Capacitance
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector-base breakdown voltage
(TLP331)
Emitter-base breakdown voltage
(TLP331)
Collector dark current
Collector dark current (TLP331)
Collector dark current (TLP331)
DC forward current gain (TLP331)
Capacitance (collector to emitter)
Symbol
Test Condition
VF
IR
CT
V(BR)CEO
V(BR)ECO
V(BR)CBO
IF = 10 mA
VR = 5 V
V = 0 V, f = 1 MHz
IC = 0.5 mA
IE = 0.1 mA
IC = 0.1 mA
V(BR)EBO
ICEO
ICER
ICBO
hFE
CCE
IE = 0.1 mA
VCE = 24 V
VCE = 24 V, Ta = 85 °C
VCE = 24 V, Ta = 85 °C
RBE = 1 MΩ
VCB = 10 V
VCE = 5 V, IC = 0.5 mA
V = 0 V , f = 1 MHz
TLP331,TLP332
Min Typ. Max Unit
1.0 1.15 1.3
V
―
―
10
μA
―
30
―
pF
55
―
―
V
7
―
―
V
80
―
―
V
7
―
―
V
―
10 100 nA
―
2
50
μA
―
0.5
10
μA
―
0.1
―
nA
― 1000 ―
―
―
12
―
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristics
Current transfer ratio
Low input CTR
Base photo-current (TLP331)
Collector-emitter saturation voltage
Symbol
IC/IF
IC/IF(low)
IPB
VCE(sat)
Test Condition
Min
IF = 1 mA, VCE = 0.5 V
100
Rank BV 200
IF = 0.5 mA, VCE = 1.5 V
50
Rank BV 100
IF = 1 mA, VCB = 5 V
―
IC = 0.5 mA, IF = 1 mA
―
IC = 1 mA, IF = 1 mA
―
Rank BV ―
Typ. Max Unit
―
1200
%
―
1200
―
―
%
―
―
10
―
μA
—
0.4
0.2
―
V
―
0.4
Coupled Electrical Characteristics (Ta = 25 to 75°C)
Characteristics
Current transfer ratio
Low input CTR
Symbol
Test Condition
Min Typ. Max Unit
IC/IF
IF = 1 mA, VCE = 0.5 V
50
Rank BV 100
―
―
―
―
%
IC/IF(low)
IF = 0.5 mA, VCE = 1.5 V
Rank BV
―
―
50
100
―
―
%
© 2019
3
Toshiba Electronic Devices & Storage Corporation
2019-06-24
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