TIP32C(2006) 查看數據表（PDF） - STMicroelectronics

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TIP32C
(Rev.:2006)

Power transistor

STMicroelectronics 

TIP32C

2

Electrical characteristics

Electrical characteristics

(Tcase = 25°C; unless otherwise specified)

Table 2.

Symbol

Electrical characteristics

Parameter

Test Conditions

ICEO

Collector cut-off current

(IB = 0)

VCB =-60V

ICES

Collector cut-off current

(VBE = 0)

VCB =-100V

IEBO

Emitter cut-off current

(IC = 0)

VEB =-5V

VCEO(sus

(1)

Collector-emitter

sustaining voltage

(IB = 0)

IC = -30mA

VCE(sat)(1)

Collector-emitter

saturation voltage

IC = -3A _

VBE(on)(1) Base-emitter voltage

IC = -3A_

hFE(1) DC current gain

IC = -1A

IC = -3A _

1. Pulsed duration = 300 ms, duty cycle ≥1.5%.

IB = 375mA

VCE =-4V

VCE =-4V

VCE =-4V

Min. Typ. Max. Unit

-0.3 mA

-0.2 mA

-1 mA

-100

25

10

V

-1.2 V

-1.8 V

50

3/8

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